Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 79: 2D Materials V: Growth, Structure and Substrate Interaction
O 79.8: Vortrag
Donnerstag, 21. März 2024, 12:15–12:30, MA 005
Optoelectronic Interactions of WS2-ZnO for Scalable LEDs Based on Two-Dimensional Materials — •Osamah Kharsah1, Leon Daniel1, Denys Vidish2, Dedi Sutarma1, Jonah von Kuczkowski1, Stephan Sleziona1, Ulrich Hagemann3, Kevin Musselman2, and Marika Schleberger1 — 1Universität Duisburg-Essen, Fakultät für Physik and CENIDE, Duisburg, Germany — 2University of Waterloo, Mechanical and Mechatronics Engineering, Waterloo,Canada — 3Interdisciplinary Center for Analytics on the Nanoscale (ICAN) and CENIDE, Duisburg, Germany
Two-dimensional tungsten disulfide (WS2) is a promising material for scalable large-area light-emitting diodes (LED) due to its direct bandgap, stability, and high photoluminescence (PL). Teamed with zinc oxide (ZnO), an electron-transport n-type semiconductor, they form the basis for an n-i-p LED architecture. This study explores the interactions between WS2 and both single-crystalline ZnO and spatial atomic layer deposition (SALD)-grown ZnO. Emphasizing the optoelectronic interaction of this heterostructure, various characterization techniques such as PL and Raman spectroscopy, Atomic Force Microscopy, Kelvin Probe Force Microscopy, and X-ray Photoelectron Spectroscopy are employed. The results reveal a stronger optoelectronic interaction in WS2-SALD ZnO, attributed to higher strain. Furthermore, we observe energy-level alignment at the interface in both cases, while noting the presence of OH groups in SALD ZnO but their absence in single-crystalline ZnO.