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O: Fachverband Oberflächenphysik
O 84: Electronic Structure of Surfaces I: Spectroscopy, Surface States
O 84.6: Talk
Thursday, March 21, 2024, 11:45–12:00, MA 144
Exploring the topologically dark surface of a layered weak 3D topological insulator — •Johannes Heßdörfer1,2, Maximilian Ünzelmann1,2, Eduardo Carillo-Aravena2,3, Armando Consiglio2,4, Michael Ruck2,3, Domenico Di Sante5, and Friedrich Reinert1,2 — 1Experimentelle Physik VII, Universität Würzburg, Germany — 2Würzburg-Dresden Cluster of Excellence ct.qmat, Germany — 3Anorganische Chemie II, Technische Universität Dresden, Germany — 4Theoretische Physik I, Universität Würzburg, Germany — 5University of Bologna, Italy
Weak three-dimensional (3D) topological insulators (TI) can be considered as a stack of 2D TIs separated by insulating spacer layers. In the family of Bi14Rh3I9 based [1] weak TIs, the electronic properties can be modified by altering the spacer layer through substitution. Here, we investigate the compound Bi12Rh3Ag6I9, by means of photoemission experiments and density functional theory band structure calculations. The results indicate the presence of surface states within the projected bulk band gap of the topologically dark surface which might alter the topological properties there. These states can be assigned to originate from the two different types of layer terminations. By analyzing the I 4d peak in the X-ray core level spectra, we show how the surface termination can be controlled, e.g. by the cleaving temperature.
[1]Rasche et al., Nat. Mater, 12, 422-425 (2013)
Keywords: TI; ARPES; XPS; Surface States