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O: Fachverband Oberflächenphysik

O 90: 2D Materials VI: Growth, Structure and Substrate Interaction

O 90.1: Talk

Thursday, March 21, 2024, 15:00–15:15, MA 005

Growth of aligned and twisted hexagonal boron nitride on Ir(110) — •Thomas Michely, Jason Bergelt, Affan Safeer, Alexander Bäder, Tobias Hartl, and Jeison Fischer — II. Physikalisches Institut, Universität zu Köln, Köln, Germany

The growth of monolayer hexagonal boron nitride (h-BN) on Ir(110) through low-pressure chemical vapor deposition is investigated using low energy electron diffraction and scanning tunneling microscopy. Growth of aligned h-BN on Ir(110) requires a growth temperature of 1500 K, whereas lower growth temperatures result in coexistence of aligned h-BN with twisted h-BN. The presence of the h-BN overlayer suppresses the formation of the nanofaceted ridge pattern known from clean Ir(110). Instead, we observe the formation of a (1 × n) reconstruction, with n such that the missing rows are in registry with the h-BN/Ir(110) moiré pattern. Quantitative moiré analysis yields a precise determination of the moiré periodicity and the h-BN lattice parameter on Ir(110).

Keywords: hexagonal boron nitride; 2D material; scanning tunneling microscopy; Ir(110)