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O: Fachverband Oberflächenphysik
O 90: 2D Materials VI: Growth, Structure and Substrate Interaction
O 90.6: Talk
Thursday, March 21, 2024, 16:15–16:30, MA 005
Imaging of topological defects in graphene grown by bottom-up synthesis — •Benedikt P. Klein1,2,3, Matthew A. Stoodley1,2, Luke A. Rochford1,6, Joel Deyerling4, David Hopkinson1, Fulden Eratam1, Tien-Lin Lee1, Sam Sullivan-Allsop7, Sarah J. Haigh7, Roman Gorbachev7, Christopher Allen1,5, Wilhelm Auwärter4, Reinhard J. Maurer2, and David A. Duncan1 — 1Diamond Light Source, Didcot, UK — 2University of Warwick, Coventry, UK — 3Korea Basic Science Institute, Daejeon, ROK — 4Technical University Munich, Germany — 5University of Oxford, UK — 6University of Cambridge, UK — 7University of Manchester, UK
Introducing defects into graphene often requires post processing, like ion sputtering or plasma etching. We present a bottom-up synthesis method yielding graphene with incorporated topological defects on a copper substrate. In the chemical vapour deposition process we use an aromatic precursor that contains the same structural elements as the desired defect. During the growth of the graphene lattice, the topology of the precursor is partly retained and topological defects are formed in the carbonaceous network. In addition to the spectroscopic characterisation presented in the separate companion talk, we quantified the defect concentration using the direct imaging techniques of nc-AFM and TEM. Our results show that the ratio of ideal to defective graphene can be controlled by varying the substrate temperature during the growth process.
Keywords: Graphene; Toplogical Defects; Bottom-up Synthesis; TEM; AFM