Berlin 2024 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 90: 2D Materials VI: Growth, Structure and Substrate Interaction
O 90.7: Vortrag
Donnerstag, 21. März 2024, 16:30–16:45, MA 005
Spectroscopic study of topological defects in graphene grown by bottom-up synthesis — Benedikt P Klein1,2, Matthew A. Stoodley1,2, Luke A. Rochford1, Dylan B. Morgan2, Michael Clarke3, Alexander Generalov4, Alexei Preobrajenski4, Leon B. S. Williams1, Tien-Lin Lee1, Alex Saywell3, Reinhard J. Maurer2, and •David A. Duncan1 — 1Diamond Light Source, Didcot, UK — 2University of Warwick, Coventry, UK — 3University of Nottingham, UK — 4MAX IV, Lund, Sweden
Introducing defects into graphene often requires post-processing, e.g. by ion sputtering or plasma etching. We present a bottom-up synthesis method yielding graphene with incorporated topological defects on a copper substrate. In the chemical vapour deposition process we use an aromatic precursor that contains the same structural elements as the desired defect. During the growth of the graphene lattice, the topology of the precursor is partly retained and topological defects are formed in the carbonaceous network. In addition to the direct imaging presented in the separate companion talk, we spectroscopically studied the defective graphene using the techniques of normal incidence X-ray standing waves (NIXSW), near edge X-ray absorption fine structure (NEXAFS) and X-ray photoelectron spectroscopy (XPS) to elucidate the structural and chemical changes induced by varying defect concentration. Structurally, our results indicate that the adsorption height varies inversely with the defect concentration.
Keywords: Graphene; Topological Defects; Bottom-up Synthesis; NIXSW; XPS