Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 94: Focus Session: Proximity Effects in Epitaxial Graphene I
O 94.7: Vortrag
Donnerstag, 21. März 2024, 17:00–17:15, MA 141
Non-equilibrium carrier dynamics and band structure of graphene on 2D tin — •Maria-Elisabeth Federl1, Niklas Hofmann1, Leonard Weigl1, Johannes Gradl1, Niklas Witt2, Tim Wehling2, Biao Yang3, Neeraj Mishra4, Camilla Coletti4, and Isabella Gierz1 — 1University of Regensburg — 2University of Hamburg — 3Technical University Munich — 4Istituto Italiano di Tecnologia, Pisa
Van der Waals heterostructures are novel artificial materials with tailored electronic properties that might enable new technologies in the fields of optoelectronics, spintronics, and quantum computing. Wafer-scale heterostructures with clean interfaces are easily obtained by confinement heteroepitaxy on SiC(0001) [1] where various elements are intercalated below the covalently bound carbon buffer layer on SiC. Confinement heteroepitaxy has recently been used to stabilize a 2D layer of Sn with exotic electronic properties [2-4]. A possible interaction with the quasi-freestanding graphene layer on top remains unexplored. Using time-and angle-resolved photoemission spectroscopy, we find a surprisingly short-lived non-thermal carrier distribution inside the Dirac cone of graphene as well as a rigid down-shift of the whole π-band that we attribute to interlayer hybridization revealed by density functional theory.
[1] Nat. Mater. 19, 637 (2020)
[2] J. Phys. D: Appl. Phys. 49, 135307 (2016)
[3] Appl. Phys. Express 11, 015202 (2018)
[4] Phys. Rev. Lett. 122, 126403 (2019)
Keywords: trARPES; confinement heteroepitaxy