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O: Fachverband Oberflächenphysik

O 94: Focus Session: Proximity Effects in Epitaxial Graphene I

Thursday, March 21, 2024, 15:00–18:00, MA 141

Proximity-induced correlation effects in low dimensional electron gases are essential for the design of new quantum materials with tailored electronic, magnetic and optical properties. The recent reports on superconductivity in twisted bilayer graphene is an intriguing example. Inherently, proximity coupling often comes along with further effects, e.g. hybridization, charge transfer, etc., so that intended quantum phenomena become easily quenched. Epitaxial graphene (EG) resembles a truly 2D electron gas system and is known for its ability of manifold and flexible functionalization schemes at its vacuum and interface site, e.g. by doping, encapsulation with high-Z materials as well as formation of superlattices. This Focus Session will provide an overview of the current state of research and possible perspectives.

Organizer: Christoph Tegenkamp (TU Chemnitz)

15:00 O 94.1 Topical Talk: Tailoring the electronic structure of epitaxial graphene on SiC — •Kathrin Küster
15:30 O 94.2 Investigating intercalated Lead layers underneath epitaxial graphene — •Philip Schädlich, Franziska Schölzel, Peter Richter, and Thomas Seyller
15:45 O 94.3 Pb-intercalated epitaxial graphene on SiC: Charge transfer mechanism and spin-split interlayer bands — •Bharti Matta, Philipp Rosenzweig, Kathrin Küster, Craig Polley, and Ulrich Starke
16:00 O 94.4 Electronic structure of intercalated epitaxial graphene: A first principles study — •Andres Unigarro, Florian Günther, Franziska Schölzel, Niklas Witt, Thomas Seyller, Tim Wehling, and Sibylle Gemming
16:15 O 94.5 Mott states under cover: Silicon intercalation of epitaxial graphene — •Niclas Tilgner, Zamin Mamiyev, and Thomas Seyller
16:30 O 94.6 Topical Talk: Proximity spin-orbit coupling and topological interfaces in graphene / alloyed transition metal dichalcogenide heterostructures — •Stephen Power and Zahra Khatibi
17:00 O 94.7 Non-equilibrium carrier dynamics and band structure of graphene on 2D tin — •Maria-Elisabeth Federl, Niklas Hofmann, Leonard Weigl, Johannes Gradl, Niklas Witt, Tim Wehling, Biao Yang, Neeraj Mishra, Camilla Coletti, and Isabella Gierz
17:15 O 94.8 Spatially Resolved Sn Intercalation of Epitaxial Buffer Layer of Graphene on SiC — •Benno Harling and Martin Wenderoth
17:30 O 94.9 Low energy plasmons in Sn-intercalated quasi-free-monolayer-graphene — •Zamin Mamiyev and Christoph Tegenkamp
17:45 O 94.10 Evidence of Sn-induced Mott states coupled to Dirac electrons in epitaxial graphene — •Chitran Ghosal, Zamin Mamiyev, Siheon Ryee, Niklas Witt, Tim Wehling, and Christoph Tegenkamp
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