Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

QI: Fachverband Quanteninformation

QI 21: Focus Session: Nanomechanical Systems for Classical and Quantum Sensing III (joint session HL/DY/TT/QI)

QI 21.3: Hauptvortrag

Donnerstag, 21. März 2024, 10:30–11:00, EW 202

Electrothermally tunable metal-graphene-siliconnitride membrane mechanical device — •Elke Scheer, Mengqi Fu, and Fan Yang — Department of Physics, University of Konstanz, 78457 Konstanz

Controlling the properties of mechanical devices over a wide range is important for applications as well as for fundamental research. In this work, we demonstrate an on-chip tunable device composed of a suspended siliconnitride (SiN) membrane with a graphene (G) layer on top which is connected to Au electrodes. Taking advantage of the electrical and thermal conductance properties of G and the difference in the thermal expansion coefficients of SiN and Au, we developed a device in which the G-Au interface serves as local heater by injecting a dc current. The force induced by the thermal expansion difference tunes the residual stress in the SiN membrane and deflects the membrane when the loading power overcomes the threshold to the buckling transition. With this device we realize an extreme large eigenfrequency tuning (more than 50 %) of the vibration mode. By injecting an ac voltage instead, and thus applying a periodic force to the membrane, we achieve strong excitation of the membrane resonator into the nonlinear vibration. This device may act as proof-of-principle for a compact on-chip excitation scheme for multidimensional and composite nanomechanical resonators.

Keywords: nano- and micromechanics; membrane resonator; graphene; siliconnitride; on-chip actuation