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QI: Fachverband Quanteninformation

QI 25: Materials and Devices for Quantum Technology II (joint session HL/QI)

QI 25.5: Vortrag

Donnerstag, 21. März 2024, 15:30–15:45, EW 203

Inhomogenous broadening of donor bound exciton transitions in ultra-pure 28-Si:P — •Nico Eggeling¹, Finja Tadge¹, Dolores García de Viedma¹, N.V. Abrosimov², Jens Hübner¹, and Michael Oestreich¹ — ¹Leibniz Universität Hannover, Germany — ²IKZ Berlin, Germany

Donor-bound excitons in ultra-pure silicon offer distinct characteristics which qualify them as well-suited candidates for applications in the field of quantum computing [1]. Using a combination of numerical and analytical calculations, we analyze the influence of statistical electric field fluctuations on donor-bound excitonic transitions in ultra-pure 28-Si:P. Our results show good agreement with current measurements of the inhomogeneously broadened excitonic linewidth. Employing approximations concerning screening effects and Monte-Carlo-type simulations, linewidth predictions are made and confirmed. The inhomogeneous nature of the excitonic complex is shown using spectral hole burning [2]. The next steps include measurements and discussion of temporal broadening of the hole-burning linewidth due to donor-acceptor recombination.

[1] Sauter, et al. Phys. Rev. Lett. 126, 137402, (2021).

[2] Yang, et al. Appl. Phy. Lett. 95, 122113, (2009).

Keywords: Silicon; Broadening; Simulation; QuBit; Spectrum