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QI: Fachverband Quanteninformation

QI 28: Surface Atom and Color Center Spin Qubits

QI 28.7: Vortrag

Donnerstag, 21. März 2024, 17:00–17:15, HFT-FT 131

Strain Engineering for Transition Metal Defects in SiC — •Benedikt Tissot¹, Péter Udvarhelyi^2,3, Adam Gali^2,3, and Guido Burkard¹ — ¹Department of Physics, University of Konstanz, D-78457 Konstanz, Germany — ²HUN-REN Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary — ³Budapest University of Technology and Economics, Institute of Physics, Department of Atomic Physics, Műegyetem rakpart 3., 1111 Budapest, Hungary

Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optical emission in one of the telecom bands. For other defects it was shown that straining the crystal can lead to beneficial effects regarding the emission properties. Motivated by this, we theoretically study the main effects of strain on the electronic level structure and optical electric-dipole transitions of the V defect in SiC. In particular we show how strain can be used to engineer the g-tensor, electronic selection rules, and the hyperfine interaction. Based on these insights we discuss optical Lambda systems and a path forward to initializing the quantum state of strained TM defects in SiC.

Keywords: color center; defect; transition metal; silicon carbide; strain