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TT: Fachverband Tiefe Temperaturen
TT 14: Artificial Intelligence in Condensed Matter Physics II (joint session TT/DY)
TT 14.2: Talk
Monday, March 18, 2024, 15:15–15:30, H 3025
Transverse barrier and filament formation by electrical triggering of a metal-to-insulator or insulator-to-metal transition — •Lorenzo Fratino1, Marcelo Rozenberg2, Pavel Salev3, Javier Del Valle4, and Ivan K. Schuller5 — 1LPTM, CY Cergy Paris Université, Cergy-Pontoise — 2LPS, Université Paris Saclay, Orsay — 3University of Denver, USA — 4University of Geneva, Switzerland — 5University of California, San Diego, USA
By doing numerical simulations on Mott resistors network model, we were able to give a theoretical background to experimental observations on magnetotransport in ferromagnetic oxide (La,Sr)MnO3 (LSMO) during electrical triggering of the intrinsic metal-insulator transition (MIT), which produces volatile resistive switching. This switching occurs in a characteristic spatial pattern, the formation of a paramagnetic insulating barrier perpendicular to the current flow, in contrast to the conventional filamentary percolation parallel to the current. This formation was also simulated in order to demonstrate that this process is triggered by nucleation at hotspots, with a subsequent expansion over several decades in time. By comparing three case studies (VO2, V3O5, and V2O3), we identified the resistivity change across the transition as the crucial parameter governing this process. Our results provide a spatio-temporal characterisation of volatile resistive switching in Mott insulators, which is important for emerging technologies, such as optoelectronics and neuromorphic computing.
[1] Phys. Rev. B 108 (2023) 174434.
[2] Nat. Comm. 12 (2021) 1.
[3] Science 373 (2021) 907.
Keywords: Mott materials; Resistive switching; neuromorphic computing; spatiotemporal characterisation; optoelectronics