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TT: Fachverband Tiefe Temperaturen
TT 16: 2D Materials I: Electronic Structure (joint session O/TT)
TT 16.3: Vortrag
Montag, 18. März 2024, 15:30–15:45, MA 005
Local creation and manipulation of sulfur vacancies in two-dimensional MoS2 — •Daniel Jansen1, Tfyeche Tounsi1, Jeison Fischer1, Arkady Krasheninnikov2, Thomas Michely1, Hannu-Pekka Komsa3, and Wouter Jolie1 — 1II. Physikalisches Institut, Universität zu Köln, Köln, Germany — 2Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — 3Faculty of Information Technology and Electrical Engineering, University of Oulu, Oulu, Finland
Point defects in two-dimensional semiconductors can exhibit spatially confined and electronically isolated quantum states in the band gap of their host material. A prerequisite for the use of such point defects in quantum applications is to gain control over defect creation and manipulation.
Here, we report on a new technique for the local creation of individual sulfur vacancies in two-dimensional MoS2 involving the tip of a scanning tunneling microscope and single Fe adatoms that we utilize as chemical markers. We exemplify how this technique can be employed to tailor the in-gap states by the creation of a vacancy dimer, giving rise to hybrid orbitals. Additionally we show that the tip can also be used to manipulate the sulfur vacancy charge state through local gating. When negatively charged, two distinct Jahn-Teller distortions are observed and characterized using scanning tunneling spectroscopy and density functional theory.
Keywords: Jahn-Teller distortion; scanning tunneling spectroscopy; quantum defect; atomic manipulation; semiconductor