Parts | Days | Selection | Search | Updates | Downloads | Help
TT: Fachverband Tiefe Temperaturen
TT 18: Superconductivity: Poster
TT 18.65: Poster
Monday, March 18, 2024, 15:00–18:00, Poster C
Characterization of Photoresists for DeepUV Direct Writing Lithography — •Niels Fiedler1, Andreas Reifenberger1, Lukas Münch1, Alexander Stoll1, Ludwig Hoibl2, Andreas Fleischmann1, and Christian Enss1 — 1KIP, Heidelberg University — 2Heidelberg Instruments Mikrotechnik GmbH
Photoresists play a key role in the transfer of patterns as protective and structuring layers for the production of micro- and nanofabricated devices. Optical maskless lithographic systems have proven to be powerful and versatile tools in research and development environments, but their resolution is limited to ≈ 0.6 µ m due to the photon wavelengths of the optical systems in use. In the framework of the SuperLSI project, Heidelberg Instruments is developing a maskless lithographic system featuring a 266 nm DeepUV optical system aiming for a resolution down to 200 nm in the patterned photoresist. At the same time, it is necessary to find and characterize suitable resists and compatible developers. Here we present first results on several resist systems (DuPont UV5-0.6 and UVN2300, micro resist technology ma-N 2400) that we used to realize sub-500 nm superconducting lines. We discuss the structural accuracy as well as etching and developer compatibilities with materials used in the production of superconducting electronics (Nb, Al). The significantly reduced linewidth allows us to work on improvements of quantum sensors like SQUIDs that benefit from smaller Josephson Junctions (JJs). We will present first characterization measurements of cross-type JJs with a junction area well below 1 µ m2.