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TT: Fachverband Tiefe Temperaturen
TT 26: Nanotubes and Nanoribbons
TT 26.7: Vortrag
Dienstag, 19. März 2024, 11:00–11:15, H 3007
Ionic liquid gating of MoS2 nanotubes and ribbons — •Konstantin D. Schneider1, Robin T. K. Schock1, Stefan Obloh1, Matthias Kronseder1, Matjaž Malok2, Maja Remškar2, and Andreas K. Hüttel1 — 1Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany — 2Solid State Physics Department, Institute Jožef Stefan, 1000 Ljubljana, Slovenia
Due to its intrinsic layered, quasi-two dimensional nature the semiconductor MoS2 is at the center of many research efforts. While its optical parameters and semiconducting characteristics are the main focus of research, previous work has also shown that MoS2 exhibits superconductivity when increasing its charge density by heavily doping the MoS2 surface using an ionic liquid gate [1]. Here we present our efforts to reach superconductivity in MoS2 nanotubes and -ribbons, the intrinsically one-dimensional variants of this material. Our nanotubes are grown via a chemical transport reaction, yielding diameters down to 7 nm and lengths up to several millimeters. For device definition, we utilize fabrication methods previously developed to create MoS2 quantum dots [2]. To maximise the contact area of MoS2 and the ionic dopant, the nanotubes are suspended by transferring them onto predefined contacts. DEME-TFSI is then applied to the chip prior to cooldown.
[1] T. Ye et al., Science 338 (2012) 1193
[2] R. T. K. Schock et al., Adv. Mater. 35 (2023) 2209333
Keywords: MoS2; nanotubes; superconductivity; ionic doping