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TT: Fachverband Tiefe Temperaturen
TT 27: Correlated Electrons: Other Materials
TT 27.7: Vortrag
Dienstag, 19. März 2024, 11:00–11:15, H 3010
Increase of resistance noise across the Mott transition — •Tim Thyzel1, Jens Müller1, Harald Schubert1, Michael Lang1, Takahiko Sasaki2, and Hiroshi Yamamoto3 — 1Institute of Physics, Goethe-Universität Frankfurt, Frankfurt (Main), Germany — 2Institute of Materials Research, Tohoku University, Sendai, Japan — 3Institute for Molecular Science, Graduate University for Advanced Studies, Okazaki, Japan
The Mott metal-insulator transition, being driven by the Coulomb interaction between crystal electrons, is of fundamental interest in the field of strongly correlated electron systems. Using the quasi-two-dimensional organic metal κ-(BEDT-TTF)2Cu[N(CN)2]Cl as a model compound for the Mott transition, we examined the slow dynamics in the charge transport by means of fluctuation spectroscopy.
This method reveals a marked, smooth increase in the low-frequency resistance noise as the system is tuned from its insulating to the metallic phase by changing the bandwidth using hydrostatic pressure. Our finding contributes to the discussion about the nature of finite-temperature Mott criticality [1,2], and raises questions about the role of disorder in the charge dynamics near a Mott instability.
In addition to bandwidth control, we make use of the field effect for carrier doping of a system close to the Mott transition [3]. This will allow us to explore the changes in charge dynamics without modifying the band structure.
[1] Gati, Science Adv. 2, e1601646
[2] Hartmann, Phys. Rev. Lett. 114, 216403
[3] Yamamoto, Nat. Commun. 4, 2379
Keywords: Mott transition; Noise; Field effect; Organic metal; 2D