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TT: Fachverband Tiefe Temperaturen

TT 54: 2D Materials IV: Graphene (joint session O/TT)

TT 54.6: Vortrag

Mittwoch, 20. März 2024, 16:30–16:45, MA 005

Investigating swift heavy ion induced defects in graphene and MoS₂ on SiO₂/Si via Raman spectroscopy — •Kevin Vomschee¹, Yossarian Liebsch¹, Leon Lasnig¹, Osamah Kharsah¹, Lars Breuer¹, Henning Lebius², Abdenacer Benyagoub², Clara Grygiel², and Marika Schleberger¹ — ¹Faculty of Physics and CENIDE, University of Duisburg-Essen, Duisburg, Germany — ²CIMAP/GANIL, Caen, France

In the past years, ions have been used as a tool for the so-called defect engineering of 2D materials such as graphene and single-layer molybdenum disulfide (MoS₂). The potential impact of swift heavy ion irradiations on strain or doping in 2D materials and, in the case of graphene, also on defect formation can be effectively characterized using Raman spectroscopy. The irradiation of graphene on SiO₂/Si substrates with 91 MeV ¹²⁹Xe²³⁺ and 967 MeV ¹²⁹Xe⁴³⁺ at GANIL creates a so called D-peak indicating the presence of defects. The area ratio of the D-peak to the G-peak, another Raman peak that is not defect dependent, is recorded for accumulated ion fluences of up to 2.5·10¹³cm⁻². Our Raman spectroscopy measurements show that swift heavy ion-induced defects in graphene are smaller in size than those investigated in earlier experiments by highly charged, slow Xe ions and keV Ar⁺ irradiation. We also observed that the 91 MeV ¹²⁹Xe²³⁺ ion beam does not significantly change strain or doping of CVD-grown MoS₂ monolayers on a similar substrate for fluences of up to 4·10¹²cm⁻², but sputters away the monolayer at a fluence of 2.5·10¹³cm⁻². The fluence dependent sputtering can be observed in a decaying intensity of the spectra.

Keywords: Graphene; Ions; Raman spectrocopy; Ion solid interaction