Berlin 2024 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 57: Topology: Poster

TT 57.2: Poster

Wednesday, March 20, 2024, 15:00–18:00, Poster E

Quantum coherent transport and Electron-electron interaction in BiSbTe ₃ single crystals — •Indu Rajput, Sonali Baral, Mukesh Kumar Dasoundhi, Devendra Kumar, and Archana Lakhani — UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore-452001, India

The ternary alloy (Bi_1−x Sb_x )₂Te₃ serves as a promising Topological insulators (TIs), switching between p and n-type semiconductors by fine tuning of E_F by varying the concentration x[1]. While the precise Bi:Sb ratio crucially positions the E_F within the band, the role of defects that occurs during growth process of single crystals remains largely unexplored despite their observations in other TIs [2]. Here we present the effect of defects on the magnetotransport properties of BiSbTe₃ single crystals. Two distinct crystals, S1 and S2 sourced from the same boule, exhibit contrasting behaviors: S1 displays metallic traits, while S2 represents a complex multi-transport mechanism involving thermal activation, hopping conduction of localized charge carriers, quantum coherent transport, and electron-electron interaction across varying temperatures. Comprehensive analysis of resistivity and magnetoresistance patterns unveils weak antilocalization behavior, elucidated by the Hikami-Larkin-Nagaoka formula. These observations suggest the presence of multichannel quantum coherent transport, which depends on the thickness of sample.

[1] J. Zhang, et al. Nat. Commun. 2, 574 (2011)

[2] A. Lakhani et al. Appl. Phys. Lett. 114, 182101 (2019)

Keywords: Topological insulators; single crystals; Magneto-transport; Quantum coherent transport; Electron-electron interaction