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TT: Fachverband Tiefe Temperaturen
TT 57: Topology: Poster
TT 57.7: Poster
Mittwoch, 20. März 2024, 15:00–18:00, Poster E
Evolution of Floquet topological quantum states in driven semiconductors — Andreas Lubatsch1 and •Regine Frank2,3 — 1Physikalisches Institut, Rheinische Friedrich Wilhelms Universität Bonn — 2College of Biomedical Sciences, Larkin University, Miami, Florida, USA — 3Donostia International Physics Center, 20018 Donostia-San Sebastian, Spain
Spatially uniform excitations can induce Floquet topological bandstructures within insulators which have equal characteristics to those of topological insulators. We demonstrate the evolution of Floquet topological quantum states for electromagnetically driven semiconductor bulk matter. We show the direct physical impact of the mathematical precision of the Floquet-Keldysh theory when we solve the driven system of a generalized Hubbard model with our framework of dynamical mean field theory (DMFT) in the non-equilibrium with physical consequences for optoelectronic applications.
[1] A. Lubatsch, R. Frank, Eur. Phys. J. B 92 (2019) 215
[2] A. Lubatsch, R. Frank, Symmetry 11 (2019) 1246
[3] P.-C. Chang, J.G. Lu, Appl. Phys. Lett. 92 (2008) 212113
Keywords: metall-insulator transition; topolgical effects; ZnO; dynamical mean field theory (DMFT); non-equilibrium