Berlin 2024 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
TT: Fachverband Tiefe Temperaturen
TT 64: Spin Transport and Orbitronics, Spin-Hall Effects I (joint session MA/TT)
TT 64.11: Talk
Thursday, March 21, 2024, 12:15–12:30, H 2013
Investigating Orbital Hall Effect Materials for Efficient Magnetization Control with In-plane and Perpendicular Magnetic Anisotropic Ferromagnets — Rahul Gupta1, •J. Omar Ledesma Martin1,2, Chloe Bouard2, Fabian Kammerbauer1, Sylvain Martin2, Gerhard Jakob1, Marc Drouard2, and Mathias Kläui1,3 — 1Institute of Physics, Johannes Gutenberg University Mainz, Staudingerweg 7, 55128 Mainz, Germany — 2Antaios, 35 Chemin du Vieux Chêne, 38240 Meylan, France — 3Center for Quantum Spintronics, Department of Physics, Norwegian, University of Science and Technology, NO-7491 Trondheim, Norway
There is considerable potential in the Orbital Hall Effect (OHE) and the Spin Hall Effect (SHE) as electrical means for controlling the magnetization of spintronic devices. Here Ru stands out exhibiting an orbital Hall conductivity four times greater than that of Pt.
This work, assesses the efficiency of four distinct stacks in devices with perpendicular Magnetic Tunnel Junctions (MTJ). Following the formula Ta/OHE/Pt/[Co/Ni]3/Co/MgO/CoFeB/Ta/Ru, where the OHE materials are Ru, Nb, and Cr. Additionally, a sample wit Pt instead of OHE serves as a reference.
The results demonstrate an improvement in the Ru samples, exhibiting higher damping-like torque and lower switching current density compared to both the other samples and the Pt reference. These findings, including first-principle calculations, underscore the potential of Ru as an OHE material for enhancing the performance and power consumption of spintronic devices.
Keywords: Orbital Hall Effect (OHE); Spin Orbit Torques (SOT); SOT-MRAM