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TT: Fachverband Tiefe Temperaturen
TT 64: Spin Transport and Orbitronics, Spin-Hall Effects I (joint session MA/TT)
TT 64.2: Vortrag
Donnerstag, 21. März 2024, 09:45–10:00, H 2013
First-principles calculation of the orbital current and orbital accumulation in metallic layers — •Daegeun Jo1, Dongwook Go2,3, Peter Oppeneer1, and Hyun-Woo Lee4 — 1Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-75120 Uppsala, Sweden — 2Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany — 3Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany — 4Department of Physics, Pohang University of Science and Technology, Pohang, South Korea
Recently, the orbital degree of freedom has emerged as a new element for the electrical control of magnetization in magnetic devices. Notably, magneto-optical measurements have demonstrated that the orbital angular momentum is accumulated by the orbital Hall effect in metallic films consisting of light elements such as Ti [Y.-G. Choi et al., Nature 619, 52-56 (2023)] and Cr [I. Lyalin et al., Phys. Rev. Lett. 131, 156702 (2023)]. However, the relationship between the orbital Hall current and the boundary orbital accumulation remains unclear. In this work, we present the theoretical calculations of the orbital Hall current and the current-induced orbital accumulation in various metallic films based on the first-principles calculations. We show that the orbital accumulation is properly described by considering the torque contribution from the crystal field in addition to the conventional orbital current.
Keywords: orbitronics; orbital Hall effect; spintronics; spin Hall effect