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TT: Fachverband Tiefe Temperaturen
TT 68: Superconductivity: Properties and Electronic Structure
TT 68.12: Vortrag
Donnerstag, 21. März 2024, 12:30–12:45, H 3010
Gate controlled switching in non-centrosymmetric superconducting devices - Comparison of fabrication methods — •Jennifer Koch1, Leon Ruf1, Elke Scheer1, and Angelo Di Bernardo1, 2 — 1Universität Konstanz, Konstanz, Germany — 2Università degli Studi di Salerno, Fisciano (SA), Italy
Gate-controlled supercurrent (GCS) devices have become of great interest as the superconducting equivalent to complementary metal-oxide-semiconductor (CMOS) logic. The idea behind this technology stems from the recent discovery that superconducting devices can be controlled electrically with the application of a gate voltage [1-3]. We investigate gate-controlled switching devices made of the noncentrosymmetric superconductor Nb0.18Re0.82 and compare how the fabrication process influences the physical properties. We examine the differences between devices fabricated with the top-down (dry-etching) and bottom-up (lift-off) approaches, as well as how the usage of different gases in the dry-etching step affects the GCS.
[1] G. De Simoni et al., Nat. Nanotechnol. 13 (2018) 802.
[2] F. Paolucci et al., Nano Lett. 18 (2018) 4195.
[3] F. Paolucci et al., Phys. Rev. Applied 11 (2019) 024061.
Keywords: superconductivity; gate-controlled supercurrent; non-centrosymmetric superconductor; nanoscopic device