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TT: Fachverband Tiefe Temperaturen
TT 69: Nonequilibrium Quantum Systems II (joint session TT/DY)
TT 69.8: Talk
Thursday, March 21, 2024, 11:30–11:45, H 3025
Numerically exact simulation of photo-doped Mott insulators — •Fabian Künzel1, André Erpenbeck2, Daniel Werner3, Enrico Arrigoni3, Emanuel Gull2, Guy Cohen4, and Martin Eckstein1 — 1University of Hamburg, 20355 Hamburg, Germany — 2University of Michigan, Ann Arbor, Michigan 48109, USA — 3Graz University of Technology, 8010 Graz, Austria — 4Tel Aviv University, Tel Aviv 6997801, Israel
A description of long-lived photo-doped states in Mott insulators is challenging, as it needs to address exponentially separated timescales. These photo-doped states simultaneously host strongly correlated electron-like and hole-like carriers and can show instabilities into various non-thermal orders. In our recent work (arXiv:2311.13933 [cond-mat.str-el]) we demonstrate how properties of such quasi-steady states can be accessed using numerically exact techniques, in particular the steady state Quantum Monte Carlo inchworm framework, by establishing a time-local ansatz for the distribution function with separate Fermi functions for the electron and hole quasiparticles. We compare the results to non-perturbative steady state solvers and validate the consistency of this approach upon comparison with real-time simulations in a quenched Hubbard model. The simulations show that the Mott gap remains robust to large photo-doping, and the photo-doped state has hole and electron quasiparticles with strongly renormalized properties. By combining the steady state ansatz with Quantum Boltzmann Equation schemes, they open up new avenues for characterizing the slow dynamics of Mott insulators.
Keywords: Hubbard model; Nonequilibrium; Mott insulator; Photo-doping; Steady-state