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TT: Fachverband Tiefe Temperaturen

TT 7: Correlated Electrons: Electronic Structure Calculations

TT 7.9: Vortrag

Montag, 18. März 2024, 11:45–12:00, H 3025

Formation of spin-orbital entangled 2D electron gas in layer delta-doped bilayer iridate La_δSr₃Ir₂O₇ — •Amit Chauhan¹, Arijit Mandal², and B. R. K. Nanda² — ¹Institute for Advanced Simulation, Forschungszentrum Jülich, 52425 Jülich, Germany — ²Condensed Matter Theory and Computational Lab, Department of Physics, IIT Madras, Chennai-36, India

The state-of-the-art doping techniques pave the way to engineer non-trivial exotic quantum transport in strongly spin-orbit coupled quantum materials. By performing DFT calculations and formulating a multi-orbital Hubbard model, we predict the formation of a sharply confined spin-orbital entangled two-dimensional electron gas (2DEG) on a δ-doped bi-layer iridate La_δSr₃Ir₂O₇. It differs from the conventional way of forming the 2DEG out of polar oxide heterostructures. The electron doping in the otherwise half-filled J_eff = 1/2 states destroy the Neel state of the IrO₂ layers near to the δ-doped layer, leading to partially filled Ir upper-Hubbard sub-bands which host the spin-orbital entangled electron gas. The gas is confined by a potential well formed by the positively charged LaO layer. The estimated electrical conductivity is giant and is of the order of 10¹⁹ Sm⁻¹s⁻¹. Our study will encourage experimenters to grow δ-doped structures on a wide class of spin-orbit correlated materials to explore the formation of 2DEG which is crucial for future quantum technologies.

[1] A. Chauhan et al., Phys. Rev. Materials 7 (2023) 114409.

Keywords: Spin-orbit coupling; Two-dimensional electron gas; Quantum phases; Electronic structure; Coulomb repulsion