Parts | Days | Selection | Search | Updates | Downloads | Help
TT: Fachverband Tiefe Temperaturen
TT 74: Topological Insulators
TT 74.6: Talk
Thursday, March 21, 2024, 16:15–16:30, H 3005
Magnetic Topological Transistor — •Hai-Peng Sun1,5, Chang-An Li1,5, Sang-Jun Choi1,5, Song-Bo Zhang2, Hai-Zhou Lu3,4, and Björn Trauzettel1,5 — 1Institute for Theoretical Physics and Astrophysics, University of Würzburg, Würzburg 97074, Germany — 2Department of Physics, University of Zürich, Winterthurerstrasse 190, Zürich 8057, Switzerland — 3Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China — 4Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China — 5Würzburg-Dresden Cluster of Excellence ct.qmat, Germany
We propose a magnetic topological transistor based on MnBi2Te4, in which the "on" state (quantized conductance) and the "off" state (zero conductance) can be easily switched by changing the relative direction of two adjacent electric fields (parallel vs. antiparallel) applied within a two-terminal junction. We explain that the proposed magnetic topological transistor relies on a novel mechanism due to the interplay of topology, magnetism, and layer degrees of freedom in MnBi2Te4. Its performance depends substantially on film thickness and type of magnetic order. We show that "on" and "off" states of the transistor are robust against disorder due to the topological nature of the surface states. Our work opens an avenue for applications of layer-selective transport based on the topological van der Waals antiferromagnet MnBi2Te4.
Keywords: Layer Hall Effect; Magnetic Topological Transistor; Antiferromagnetic Topological Insulator; Intrinsic Magnetic Topological Insulator