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TT: Fachverband Tiefe Temperaturen
TT 80: Correlated Electrons: Poster
TT 80.6: Poster
Thursday, March 21, 2024, 15:00–18:00, Poster E
Single crystal growth and characterization of EuMn2Si2 and EuMn2Ge2 — •Janina Strahl, Marwa Hussein Abdelhakam Abouelela, Kristin Kliemt, and Cornelius Krellner — Institute of Physics, Goethe-University, Frankfurt (Main), Germany
EuMn2Si2 exhibits a thermally driven valence transition at around 530 K of the europium ions above room temperature from Eu3+ at low temperatures to Eu∼ 2.5+ at high temperatures [1]. The isoelectronic and isostructural substitution of silicon with germanium leads to a stabilization of the divalent state of Eu in EuMn2Ge2 without Eu ordering down to 1.5 K [1]. Both rare earth intermetallic 122 compounds crystallize in the tetragonal ThCr2Si2 structure type and show antiferromagnetic ordering of the manganese sublattices above room temperature. In literature [1,2] additional spin-reorientation transitions in polycrystalline samples at low temperatures were observed. In this contribution, we present the single crystal growth of these compounds and the results of our structural, chemical and magnetic characterization.
[1] M. Hofmann et al., Phys. Rev. B 69, 174432 (2004)
[2] I. Nowik et al., Phys. Rev. B 55, 3033 (1997)
Keywords: crystal growth; valence fluctuation; antiferromagnetism