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TT: Fachverband Tiefe Temperaturen
TT 86: Correlated Electrons: Method Development
TT 86.13: Talk
Friday, March 22, 2024, 12:45–13:00, H 3007
Quasi-particle Bound States at Mott-Semiconductor In- terfaces — •Jan Verlage1, Friedemann Queisser2,3, Peter Kratzer1, and Ralf Schützhold2,3 — 1Fakultät für Physik, Universtät Duisburg-Essen — 2Institut für Theoretische Physik, Helmholtz-Zentrum Dresden-Rossendor — 3Institut für Theoretische Physik, Technische Universität Dresden
We investigate bound states at the interfaces between semiconductors and a strongly correlated Mott insulator. Employing a method exploit- ing the hierarchy of correlations we identify effective quasi-particle and hole excitations in the heterostructure. To leading order in the hierar- chy, the modes satisfy an effective two-component evolution equation. This allows for the investigation of bound states at single interfaces and heterostructures with and without conctact potentials at the in- terfaces. A single interface necessitates a contact potential to support bound states while a heterstructure does not.
The project is funded by the DFG, grant # 278162697 (CRC 1242).
Keywords: Hubbard Model; Heterostructure; Hierarchy of Correlations; Strongly Correlated Systems