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TT: Fachverband Tiefe Temperaturen
TT 88: 2D Materials and Heterostuctures: (Twisted) Bilayers (joint session HL/TT)
TT 88.5: Vortrag
Freitag, 22. März 2024, 10:30–10:45, EW 201
Investigating the orbital dependence of the superlattice potential in Moiré semiconductors with NanoARPES — •Gianmarco Gatti1, Julia Issing1, Dario Rossi2, Louk Rademaker2, Anna Tamai1, and Felix Baumberger1 — 1Department of Quantum Matter Physics, University of Geneva, Geneva, 1211, Switzerland — 2Department of Theoretical Physics, University of Geneva, Geneva, 1211, Switzerland
Moiré semiconductors emerged as tunable quantum simulators for strongly correlated phases. The single-particle low-energy physics is ruled by the moiré-periodic superpotential that develops by twisting or stacking layers with different lattice parameters. Signatures of this modulation are observed in the spectral function measured by angle-resolved photoemission spectroscopy (ARPES) in the form of replicas and gaps opening at the nascent zone boundary. In twisted bilayer transition metal dichalcogenides (TMDs), flat bands are reported at the Brillouin zone center and their dispersion is associated to the effective moiré potential experienced by electronic states with large out-of-plane orbital character. Here, we extend this analysis and present the orbital and wave vector dependence of this interaction over the whole Brillouin zone by comparing quantitatively our ARPES data on a TMD heterobilayer with an extended tight-binding model. Our results set the fundaments for future spectroscopic studies of the electronic correlations in moiré systems.
Keywords: Moiré physics; ARPES; 2D materials; Electronic structure