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TT: Fachverband Tiefe Temperaturen
TT 91: 2D Materials VII: Heterostructures (joint session O/TT)
TT 91.2: Talk
Friday, March 22, 2024, 10:45–11:00, MA 005
Growth and nanomanipulation of ultrathin Bismuthene nanoflakes on h-BN monolayers — •Antonio J. Martínez-Galera1,2,3 and José M. Gómez-Rodríguez2,3,4 — 1Departamento de Física de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid, Spain — 2Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049 Madrid, Spain — 3Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, E-28049 Madrid, Spain — 4Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
Bismuthene, a young member of the family of 2D Materials, exhibits unique electronic properties when reduced to a single layer [1,2]. This study explores the growth of thin bismuth nanoflakes on h-BN monolayers under ultrahigh vacuum conditions. High-resolution scanning tunneling microscopy (STM) images unveil a stacking arrangement of Bi atoms within the nanoflakes, similar to the structure of Bi(110) planes in bulk material. Precise control of nanoflakes thickness, down to the lower limit of a bilayer, has been achieved by adjusting the deposited Bi amount on the h-BN surfaces. In addition to the structural characterization, well-controlled nanomanipulation experiments by using the STM tip have been conducted with these nanoflakes.
References:
[1] F. Reis et al. Science 357, 287-290 (2017).
[2] S. Zhang et al. Chem. Soc. Rev. 47, 982-1021 (2018).
Keywords: Bismuthene; 2D Materials; Scanning Tunneling Microscopy; Nanomanipulation; Ultrahigh vacuum