Freiburg 2024 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 13: Quantum Technologies
Q 13.8: Talk
Monday, March 11, 2024, 18:45–19:00, HS 3219
Industrially fabricated ion trap chips for double-well coupling experiments — •Michael D.J. Pfeifer1,2, Simon Schey1,3, Matthias Dietl1,2, Fabian Anmasser1,2, Jakob Wahl1,2, Marco Valentini2, Martin van Mourik2, Thomas Monz2, Fabian Laurent1, Clemens Rössler1, Yves Colombe1, and Philipp Schindler2 — 1Infineon Technologies Austria AG, Villach, Austria — 2University of Innsbruck, Innsbruck, Austria — 3Stockholm University, Stockholm, Sweden
We present surface ion trap chips, industrially fabricated at Infineon Technologies [1,2], that are capable of trapping ions in two separate rf potential wells. The chips are designed for investigating rf shuttling, or radial shuttling, in the large separation and in the coupling regimes as element of a scalable architecture [1]. The design parameters of a surface ion trap in the rf coupling regime with optimal ion height and ion-ion distance are investigated.
The ion traps are fabricated on the dielectric substrates Fused Silica and Sapphire. The advantages of these substrates and the status of industrial microfabrication on these materials are discussed.
[1] Ph. Holz, S. Auchter et al., Adv. Quantum Technol. 3, 2000031 (2020)
[2] S. Auchter, C. Axline et al., Quantum Sci. Technol. 7, 035015 (2022)
Keywords: microfabrication; industrial fabrication; scaling; ion trap chip; Sapphire