Freiburg 2024 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 30: Color Centers I
Q 30.2: Talk
Wednesday, March 13, 2024, 11:15–11:30, HS 3118
Photon-collection enhancement of V2-centers integrated in a cavity-based 4H-SiC antenna. — •Jonathan Körber1, Jonah Heiler1,2, Erik Hesselmeier1, Pierre Kuna1, Rainer Stöhr1, Philipp Flad3, Philipp Fuchs4, Misagh Ghezellou5, Jawad Ul-Hassan5, Wolfgang Knolle6, Christoph Becher4, Florian Kaiser1,2, and Jörg Wrachtrup1 — 13rd Institute of Physics, University of Stuttgart, Germany — 2MRT Department, Luxembourg Institute of Science and Technology & Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg — 34th Physics Institute, University of Stuttgart, Germany — 4Universität des Saarlandes, Fachrichtung Physik, Saarbrücken, Germany — 5Department of Physics, Chemistry and Biology, Linköping University, Sweden — 6Leibniz-Institute of Surface Engineering (IOM), Leipzig, Germany
Color centers in semiconductors promise various applications for quantum technologies. However, due to the typically large refractive indices of the host materials, photons are extracted inefficiently from such color centers, while high photon count rates are a key requirement for many applications. Here, we present the fabrication of a planar, cavity-based antenna based on silver-coated, sub-micron-thin silicon carbide membranes to increase the photon extraction from integrated silicon-vacancy color centers. Further, we report a count rate enhancement of up to one order of magnitude for single, cavity-integrated color centers compared to bulk and find stable, resonant absorption lines at cryogenic temperatures.
Keywords: Color Center; Silicon Carbide; Microfabrication