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Q: Fachverband Quantenoptik und Photonik

Q 30: Color Centers I

Q 30.3: Vortrag

Mittwoch, 13. März 2024, 11:30–11:45, HS 3118

Towards Quantum Computing with Divacancies in Silicon Carbide — •Flavie Marquis, Jonah Heiler, and Florian Kaiser — MRT Department, Luxembourg Institute of Science and Technology & Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg

Colour-centres provide an excellent platform for quantum technology. They enable a pairing of spin-photon interfaces with robust qubits and memories. The nitrogen-vacancy (NV) centre in diamond has lead most of the developments. However, new promising systems are being investigated [1]. Here, we consider stacking-fault divacancies (sf-VVs) in silicon carbide (SiC). The sf-VV centre resembles the diamond-NV in terms of spin level structure, spin-control fidelities, high ODMR contrast at room temperature, nuclear spin control capabilities and adequately high photon count rates [2]. Since sf-VV centres are integrated into a semiconductor host, they benefit from industry technology, such as integration into p-i-n diodes for wavelength tuning [3], as well as mature nanofabrication for improving optical efficiencies [4]. Here, we present our first results on fabrication and control of sf-VVs in SiC at room temperature, including spin coherence times and control fidelities. An outlook towards high-level nuclear spin control within the di-atomic lattice is discussed.

[1] Nat. Photonics 12, 516 (2018)

[2] Nat. Sci. Rev. 9, nwab122 (2022)

[3] Science 366, 1225 (2019)

[4] Nat. Mater. 21, 67 (2022)

Keywords: Colour Centres; Silicon Carbide