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Q: Fachverband Quantenoptik und Photonik
Q 30: Color Centers I
Q 30.7: Vortrag
Mittwoch, 13. März 2024, 12:30–12:45, HS 3118
Spin Control of Silicon-Vacancy Centers in Nanodiamonds — •Marco Klotz1, Andreas Tangemann1, Viacheslav Agafonov2, and Alexander Kubanek1 — 1Institute for Quantum Optics, University Ulm, Germany — 2GREMAN, UMR 7347 CNRS, INSA-CVL, Tours University, 37200 Tours, France
For the realization of quantum networks, qubits that can be interfaced with scalable photonic technologies are of major interest. Due to their good optical and spin properties [1], group IV defects in diamond are promising candidates for these applications. We are using negatively-charged silicon-vacancy-centers hosted in nanodiamonds that can be integrated into photonic structures. Compared to bulk diamond, SiVs hosted in a nanodiamond experience less dephasing due to a combination of locally modified phonon density of states and increased ground-state splitting [2]. Hence, they are a candidate for operation above mK temperature, decreasing the technological overhead. Here, we present our progress in characterizing and controlling the electron-spin qubit of a SiV- in a nanodiamond at liquid Helium temperature for future application in quantum networks.
[1] R. Waltrich et al., Two-photon interference from silicon-vacancy centers in remote nanodiamonds, 10.1515/nanoph-2023-0379
[2] M. Klotz et al., Prolonged Orbital Relaxation by Locally Modified Phonon Density of States for the SiV- Center in Nanodiamonds, 10.1103/PhysRevLett.128.153602
Keywords: Nanodiamond; Group IV Defects; Silicon Vacancy; Spin Environment; Spin Control