Freiburg 2024 – scientific programme

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Q: Fachverband Quantenoptik und Photonik

Q 30: Color Centers I

Q 30.8: Talk

Wednesday, March 13, 2024, 12:45–13:00, HS 3118

Thin-film 4H-silicon carbide-on-Insulator for spin-mechanical applications — •Yan Tung Kong, Jonathan Körber, San Lam Ng, Ruoming Peng, and Jörg Wrachtrup — 3. Physikalisches Institut, Universität Stuttgart, Stuttgart, Germany

High-quality, wafer-scale, thin-film silicon carbide (SiC) holds significant potential in the realms of modern microelectromechanical systems (MEMS), integrated nonlinear photonic circuits, and quantum photonics. Nevertheless, the properties of thin-film SiC often suffer a significant degradation comparing to bulk crystals, primarily due to surface damage incurred during bonding and thinning processes. In this study, we present a successful demonstration of the complete process flow for thin-film 4H-silicon carbide-on-Insulator (4H-SiCOI). Our approach integrated plasma activation bonding, Chemical Mechanical Polishing (CMP), and Inductively Coupled Plasma Etching (ICP-RIE) techniques, effectively mitigating surface damage and ensuring the production of high-quality thin-film SiC with preserved properties. Furthermore, we fabricated nano-mechanical and photonic SiC devices featuring implanted Si vacancies within our SiC thin films (<1 um). This provides a unique platform for exploring spin-phonon-photon dynamics in nanoscale opto-mechanical devices.

Keywords: Silicon carbide; optomechanical; thin film; spin-phonon