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Q: Fachverband Quantenoptik und Photonik

Q 55: Poster VI

Q 55.22: Poster

Thursday, March 14, 2024, 17:00–19:00, Tent B

PL5-7 centers in 4H-SiC for spin-based quantum technologies — •Raphael Wörnle1, Jonathan Körber1, Timo Steidl1, Georgy Astakhov2, Florian Kaiser1,3, and Jörg Wrachtrup113rd Institute of Physics, IQST and Research Centre SCoPE, University of Stuttgart, ZAQ, Stuttgart, Germany — 2Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany — 3MRT Department, Luxembourg Institute of Science and Technology, Belvaux, Luxembourg

4H-silicon carbide (SiC) has emerged as a promising platform to host point defects with possible applications in quantum technologies, such as distributed quantum computing or sensing. However, the typically detected spin signal contrast of color centers in SiC and the count rates are quite low.

Recently, divacancies located near stacking faults in 4H-SiC (PL5- 7 centers) have drawn considerable attention. They impress with a high readout contrast and a high photon count rate, making them competitive with the NV center in diamond. However, as the defects are relatively new, their theoretical properties are unexplored and their creation is not yet deterministically possible.

Here, we present the generation of PL5-7 centers through ion irra- diation and characterize their spin properties via optically detected magnetic resonance (ODMR) and pulsed measurements at room tem- perature. Further, we show the coupling between a nuclear spin and single defect spins.

Keywords: Color center; Silicon carbide; Quantum sensing

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