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Q: Fachverband Quantenoptik und Photonik

Q 55: Poster VI

Q 55.28: Poster

Donnerstag, 14. März 2024, 17:00–19:00, Tent B

Homogeneous etching of nanofabricated waveguide structures in 4H-SiC for quantum information applications — •Nithin Thomas Alex, Marcel Krumrein, and Jörg Wrachtrup — 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Germany

Silicon Carbide (SiC) is a wide bandgap semiconductor used abundantly in high power electronics applications. It has also found its way into the quantum industry as it can host color centers with great spin-optical properties. Integration of these defects into nanophotonic structures, such as waveguides and photonic crystal cavities (PCCs), is key to implement quantum network nodes. Even though the research in this field is making steady progress, proper fabrication techniques for the scalability of these structures still needs to be addressed. The current techniques, such as using a Faraday cage, for fabricating waveguides and PCCs with a triangular cross-section[1] lack homogenous etching on the wafer scale. To overcome these challenges, we have been testing various recipes in the state-of-the-art reactive ion beam etching (RIBE) device from OXFORD instruments, called Ionfab 300+.

[1] S. Majety, V. A. Norman, L. Li, M. Bell, P. Saha, and M. Radulaski, *Quantum photonics in triangular-cross-section nanodevices in silicon carbide,* Journal of Physics: Photonics, vol. 3, p. 34008, 2021.

Keywords: Silicon Carbide; Reactive Ion Beam etching; traingular cross section waveguides; nanofabrication