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Q: Fachverband Quantenoptik und Photonik
Q 6: Solid State Quantum Optics I
Q 6.2: Talk
Monday, March 11, 2024, 11:15–11:30, HS 3118
Design of a high-speed graphene optical modulator on Si3N4 platform for on-chip communication — •Ashraful Islam Raju1, Pawan Kumar Dubey1, Rasuole Lukose1, Christian Wenger1,2, Andreas Mai1,3, and Mindaugas Lukosius1 — 1IHP- Leibniz Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 2BTU Cottbus Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany — 3Technical University of Applied Science, Hochschulring 1, 15745 Wildau, Germany
Electro-absorption (EA) optical modulator is essential for the advancement of on-chip optical signal processing. While silicon-photonics is a prime candidate, graphene photonics has garnered significant attention due to its remarkable electrical and optical properties. Graphene modulators typically use silicon-on-insulator (SOI) platforms, but Silicon-nitride on-silicon-dioxide (Si3N4-on-SiO2) is emerging as a promising alternative with low optical losses and wide compatibility. Despite potential advantages, achieving both high-speed and large modulation efficiencies simultaneously in a single graphene-based device has been challenging. To address this, we designed and simulated a waveguide-coupled double-layer graphene EA modulator on the Si3N4-on-SiO2 platform. We conducted detailed simulations to optimize waveguide dimensions, optical modes, and graphene layer spacing for optimum device performance. Simulation shows a 140 GHz bandwidth, 35 dB extinction ratio (equivalent to a 0.16 dB/um modulation depth), and a low 1.1 dB insertion loss at a wavelength of λ=1550 nm.
Keywords: Photonics; Optical Modulator; Waveguide; Graphene; Electro-Optic absorption