Parts | Days | Selection | Search | Updates | Downloads | Help
Q: Fachverband Quantenoptik und Photonik
Q 64: Solid State Quantum Optics II
Q 64.7: Talk
Friday, March 15, 2024, 12:30–12:45, HS 3219
Solid state quantum emitter in wide band gap materials — •A. Kumar1, C. Samaner2, C. Cholsuk1, T. Matthes1, S. Suwanna3, S. Ateş2, and T. Vogl4 — 1FSU Jena, Germany — 2İİT, Turkey — 3Mahidol University, Thailand — 4TU Munich, Germany
With the rapid development of quantum technology, there has been a growing demand for materials capable of hosting quantum emitters. One such material platform is fluorescent defects in wide band gap materials capable of hosting deep sub-levels within the band gap. Here, we investigate experimentally and theoretically using DFT simulations and compare the fabrication and photophysical properties of quantum emitters in multi-layer mica, hBN and other 3D crystals, such as silicon carbide and gallium nitride which are known to host quantum emitters. We used localized electron beam irradiation process to induce single emitters emitting at 575 nm in hBN with a high yield and emitter ensembles in Mica. The emitters in hBN present a strong correlation with hBN crystal axis, which provides an important step towards the identification of emitters and their formation process. Additionally, we explore temporal polarization dynamics, uncovering a mechanism that governs the time-dependent polarization visibility and dipole orientation of color centers in hBN and diamond. Our further investigation involves the integration of hBN emitters with a nanophotonics platform to develop on-chip quantum light sources for future quantum technology applications.
Keywords: Crystallographic defects; Time-correlated single photon counting; electron irradiation; temporal polarization dynamics; Density functional theory