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Q: Fachverband Quantenoptik und Photonik

Q 9: Bosonic Quantum Gases II (joint session Q/A)

Q 9.8: Vortrag

Montag, 11. März 2024, 18:45–19:00, Aula

Dressed 171Yb+ Hyperfine Qubits in a Multi-layer Planar Ion Trap — •Elham Esteki¹, Bogdan Okhrimenko¹, Amado Bautista Salvador^2,3,4, Christian Ospelkaus^2,3,4, Ivan Boldin¹, and Christof Wunderlich¹ — ¹Dept. Physik, Nat.-Techn. Fak., Universität Siegen, 57068 Siegen (Germany) — ²Leibniz Universität Hannover, Welfengarten 1, 30167 Hannover (Germany) — ³Laboratory for Nano - and Quantum Engineering, Schneiderberg 39, 30167 Hannover (Germany) — ⁴Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)

Dressed atomic states - the eigenstates of the Hamiltonian of an atom subject to a near-resonant driving field - protect atomic states against decoherence due to common noise sources. We present a micro-fabricated ion-trap-chip, designed for quantum information processing based on radiofrequency-dressed qubits using hyperfine states of 171Yb+ ions [1]. The trap-chip consists of multiple layers [2], one of which includes an integrated RF resonator near 12.6 GHz. It creates an axial gradient of the microwave magnetic field amplitude which serves for individual qubit addressing, as well as for qubit-qubit coupling. We experimentally characterize this novel ion-trap-chip and demonstrate preparation, manipulation and detection of RF-dressed single-and two-qubit gates.

References

1. S. Wölk et al., New J. Phys. 19, 083021 (2017)

2. A. Bautista-Salvador et al., New J. Phys. 21, 043011 (2019)

Keywords: Quantum information; Trapped ions; Radio-frequency qubits; Planar ion trap; Dressed states