Karlsruhe 2024 – scientific programme

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T: Fachverband Teilchenphysik

T 112: Silicon trackers 5

T 112.3: Talk

Friday, March 8, 2024, 09:30–09:45, Geb. 30.22: kl. HS A

Laboratory and Beam-Test Measurements for proton-irradiated, large-scale depleted MAPS in 150nm CMOS technology — •Lars Schall, Jochen Dingfelder, Christian Bespin, Ivan Caicedo, Fabian Hügging, Hans Krüger, Norbert Wermes, and Sinuo Zhang — University of Bonn

The increasing availability of high-resistivity silicon substrate with high-biasing capabilities in commercial CMOS processes facilitates the use of monolithic active pixel sensors (MAPS) in modern high-energy physics experiments. An improvement in radiation hardness is achieved by fully depleting the sensitive volume, as done for depleted MAPS (DMAPS), increasing the initial input signal and providing fast charge collection by drift. This makes DMAPS a promising alternative to conventional hybrid pixel detectors for use in high-rate, high-radiation environments, such as for the ATLAS Inner Tracker upgrade.

LF-Monopix2 is a large-scale 1x2cm² DMAPS with a 150x50µm² pixel pitch designed in 150nm LFoundry CMOS technology. The placement of the in-pixel electronics inside the large charge-collection electrode relative to the pixel pitch facilitates a homogeneous electric field with short drift distances across the sensitive sensor volume. Sensors have successfully been thinned down to 100µm thickness and backside processed. Laboratory measurements have proven the general functionality of proton-irradiated samples up to fluences of 2e15neq/cm². In this contribution, the latest beam-test studies of irradiated LF-Monopix2 sensors are presented. Special emphasis is put on hit-detection and in-time efficiencies after irradiation.

Keywords: Monolithic; Pixel; DMAPS