Karlsruhe 2024 – scientific programme
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T: Fachverband Teilchenphysik
T 113: Silicon trackers 6
T 113.2: Talk
Friday, March 8, 2024, 09:15–09:30, Geb. 30.22: kl. HS B
Characterization of Sensor Properties of Large DEPFET Modules for the Belle II Pixel Detector — Patrick Ahlburg, Florian Bernlochner, Jochen Dingfelder, Georgios Giakoustidis, Munira Khan, Hans Krüger, •Botho Paschen, Jannes Schmitz, and Paula Scholz — University of Bonn
The Belle II PiXel Detector (PXD) is composed of large (1.5×8.5 cm2) all-silicon modules with integrated sensor and bump-bonded Application Specific Integrated Circuits (ASICs). Pixel matrices of DEpleted P-channel Field Effect Transistors (DEPFETs) with pixel pitches down to 55×50 µ m2 constitute their active area. The DEPFET technology is employed for the first time in High Energy Physics in the Belle II experiment that has recorded data from e+−e− collisions since 2019.
Variations in the DEPFET drain currents form the detection signal for ionizing radiation. To achieve a high resolution, an online dark current subtraction is implemented in the digitizer ASIC. Process and wafer bulk property fluctuations lead to variations of the FET properties and their dark currents over the sensor area.
The PXD pixel design and results of sensor current characterizations will be presented in this talk.
Keywords: DEPFET; Belle II; silicon; FET; process variations