Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
T: Fachverband Teilchenphysik
T 115: Detectors 10 (semiconductors)
T 115.3: Vortrag
Freitag, 8. März 2024, 09:30–09:45, Geb. 30.23: 2/1
Developing a simulation chain for synthetic single and polycrystalline diamonds using Allpix-squared — •faiz ur rahman ishaqzai1,2, Tobias Bisanz1, and Jens Weingarten1 — 1TU Dortmund, Germany — 2DEU Izmir Turkey
Diamond, known for its exceptional properties, such as radiation hardness and a larger radiation length, stands out as a promising material for tracking detectors in high-energy physics experiments. A simulation chain has been developed to assess the validity of implementing diamond as a sensor material in Allpix-squared, a widely used software framework in the high-energy physics community, based on GEANT4. It was started to simulate testbeam setups with silicon detectors but has garnered interest from a wider community by now. It is shown that the currently implemented physics models for charge career drift are ineffective when applied to diamond. The charge carrier drift properties of diamond are influenced by very low acceptor concentrations, which resulted in the implementation of diamond-specific parameter values for mobility models in Allpix-squared. Additionally, a model representing the polycrystalline nature of diamond was introduced. I will present the simulation results of charge carrier properties of single-crystal chemical vapor deposition (scCVD) and polycrystalline chemical vapor deposition (pcCVD). These results are systematically compared with experimental and literature data to further validate the effectiveness of the implemented models in Allpix-squared.
Keywords: scCVD Diamond; pcCVD diamond; Allpix-squared