Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

T: Fachverband Teilchenphysik

T 12: Detectors 1 (electronics)

T 12.3: Vortrag

Montag, 4. März 2024, 16:30–16:45, Geb. 30.23: 2/1

Irradiation test campaign on the CMOS LDO components for the ATLAS sMDT on-detector electronics for the HL-LHC Phase-II Upgrade — Sergey Abovyan, Nayana Bangaru, •Francesco Fallavollita, Markus Fras, Oliver Kortner, Sandra Kortner, Hubert Kroha, Robert Richter, and Elena Voevodina — Max Planck Institut für Physik - Werner Heisenberg Institute, München, Germany

The Muon System of the ATLAS experiment at CERN LHC will be upgraded for the high-luminosity phase of LHC to cope with higher rates and higher radiation levels. Most of the Muon-System on-detector electronics will be replaced. Commercial low-dropout (LDO) voltage regulators have been considered as a robust, low-noise and economic solution to power distribution in the ATLAS sMDT front-end electronics for the HL-LHC Phase-II Upgrade. The LDO components should be selected based on their capability to comply to radiation requirements. For this reason, radiation hardness studies have been extensively performed on different production batches of CMOS LDOs, by constantly monitoring online the relevant parameters during the TID and SEE irradiation test. Irradiations were performed in the Cobalt-60 facility at CERN (Geneva), to test resistance to the TID effects, and at the Proton Irradiation Facility 230 MeV proton beam at PSI (Zurich), to test SEE effects. Additionally, a post radiation accelerated annealing test has been performed on the irradiated samples in order to study any potential long term effects. The experimental setup and the results are presented and discussed in this communication.

Keywords: HL-LHC Phase-II Upgrade; ATLAS sMDT front-end electronics; Commercial low-dropout (LDO) voltage; Total-Ionizing-Dose (TID) effects; Single Event Effect (SEE)