Karlsruhe 2024 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

T: Fachverband Teilchenphysik

T 37: Silicon trackers 2

T 37.6: Talk

Tuesday, March 5, 2024, 17:15–17:30, Geb. 30.22: kl. HS B

Test Beam Analysis of Irradiated, Passive CMOS Strip Sensors — •Fabian Lex for the CMOS Strips collaboration — Albert-Ludwigs-Universität Freiburg, Freiburg, Germany

Nearly all envisioned future high-energy particle detectors will employ silicon sensors as their main tracking devices. Due to the increased demand in performance, large areas of the detectors will have to be covered with radiation hard silicon, facilitating the need for silicon sensors produced in large quantities, reliably and cost-efficiently.
A possible solution to these challenges has been found in the utilization of the CMOS process, which is an industrial standard, offering the advantage of a large choice of vendors and reduced production costs. To create the larger sensor structures typical for silicon strip trackers, the stitching process has to be used.
Three variations of passive CMOS strip sensors have been designed by the University of Bonn and produced by LFoundry in a 150 nm process. Sensor samples have been irradiated up to a fluence of 1 · 10¹⁶n_eq/cm² with reactor neutrons and up to 1 · 10¹⁵n_eq/cm² with 23 GeV protons. In order to investigate the general performance of the designs and the influence of the stitching on resolution, hit detection efficiency and charge collection, unirradiated as well as irradiated samples have been tested in the DESY-II test beam facility. This talk will show that even after heavy irradiation signal collection by the different sensor designs is still possible and that the stitching does not impact sensor performance.

Keywords: CMOS; Silicon; Strip sensors; Test beam; Radiation hardness