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T: Fachverband Teilchenphysik

T 37: Silicon trackers 2

T 37.7: Vortrag

Dienstag, 5. März 2024, 17:30–17:45, Geb. 30.22: kl. HS B

Characterisation and TCAD Simulation of Stitched, Passive CMOS Strip Sensors — •Iveta Zatocilova for the CMOS Strips collaboration — Albert-Ludwigs-Universität, Freiburg, Germany

Silicon sensors play a key role in the tracking detectors of high-energy physics experiments. Due to upcoming upgrades and future particle detectors, the requirements in radiation hardness and reliability of the sensors are constantly increasing. There is a need for alternative silicon sensor concepts that can realise a larger choice of manufactures while meeting the complex requirements.

A promising technology is found in passive CMOS sensors, based on CMOS imaging technology. As this technology is an industry-standard, it can offer a lowered sensor cost, as well as access to fast and large-scale production.

The passive CMOS project is investigating passive CMOS strips sensors fabricated by LFoundry in a 150 nm technology. A total of three different strip designs have been investigated.

Passive CMOS strip sensors were evaluated based on simulated electrical characteristics of the fabricated structures. For this purpose, Synopsys Centaurus TCAD was used. By simulating electric field we were able to look at differences between the designs. On the macroscopic level we have simulated electrical characteristics that are yielding a satisfactory agreement when compared to measured data.

This presentation will provide an insight into the sensor design and a comparison of simulated and measured sensor characteristics will also be presented.

Keywords: TCAD simulations; CMOS; silicon strip sensors; electrical characteristics