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T: Fachverband Teilchenphysik

T 37: Silicon trackers 2

T 37.8: Vortrag

Dienstag, 5. März 2024, 17:45–18:00, Geb. 30.22: kl. HS B

Characterisation and Simulation of stitched CMOS Strip Sensors — •Naomi Davis for the CMOS Strips collaboration — Deutsches Elektronen-Synchrotron (DESY), Notkestraße 85, 22607 Hamburg

In high-energy physics, upgrades for particle detectors and studies on future particle detectors are largely based on silicon sensors as tracking devices. Consequently, there is a need to investigate silicon sensor concepts that offer large-area coverage and cost-efficiency. Sensors based on the CMOS imaging technology present such an alternative silicon sensor concept for tracking detectors. As this technology is a standardised industry process it can provide a lower sensor production cost, as well as access to fast and large-scale production from a variety of vendors. The CMOS Strips project is investigating passive CMOS strip sensors fabricated by LFoundry in a 150 nm technology. By employing the technique of stitching, two different strip formats of the sensor have been realised. The strip design varies in doping concentration and width of the strip implant to study various depletion concepts and electric field configurations. Unirradiated and irradiated samples have been characterised in several test beam campaigns at the DESY II test beam facility. In addition, the detector response was simulated based on Monte Carlo methods and electric fields provided by TCAD device simulations. This contribution presents studies on the signal distribution, spatial resolution and the hit detection efficiency of the strip sensors. The simulated detector response is presented and compared to test beam data.

Keywords: Test Beam; Simulation; CMOS; Strip Sensors; Silicon Detector