Karlsruhe 2024 – scientific programme
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T: Fachverband Teilchenphysik
T 61: Silicon trackers 3
T 61.7: Talk
Wednesday, March 6, 2024, 17:30–17:45, Geb. 30.22: kl. HS B
Simulation and measurement of humidity-induced breakdown in silicon sensors — Ingo Bloch2, Ben Brüers2, Heiko Lacker1, Peilin Li1, Ilona Stefana Ninca2, and •Christian Scharf1 — 1Humboldt-Universität zu Berlin — 2Deutsches Elektronen-Synchrotron (DESY)
Humidity exposure of silicon sensors, which do not have a special treatment of the top oxide/nitride layer, can lead to early electrical breakdown. The cause has been long known to be the humidity-dependent mobility of impurity ions on the outer oxide/nitride surface, which can alter the potential at the surface. However, the exact mechanisms that lead to electrical breakdown are poorly studied.
This work focuses on TCAD simulations of the guard ring region of planar silicon diodes, where breakdown can be located by hot-electron emission microscopy. The effect of humidity is simulated by adding a resistive layer on top of the oxide/nitride and adjusting the mobilities of the charge carriers in the layer. To verify the results of the TCAD simulations, TCT measurements in the guard ring region and accompanying Allpix Squared simulations have been performed.
The simulations together with the measurements are targeted to contribute to a better understanding of the mechanism and the relevant parameters driving the humidity-induced early breakdown.
Keywords: Silicon; breakdown; guard ring; TCAD; TCT