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T: Fachverband Teilchenphysik

T 92: Detectors 8 (semiconductors)

T 92.3: Vortrag

Donnerstag, 7. März 2024, 16:30–16:45, Geb. 30.23: 2/1

Characterisation and Performance of a Digital SiPM in an 150 nm CMOS Imaging Technology — •Gianpiero Vignola^1,2, Inge Diehl¹, Karsten Hansen¹, Tomas Vanat¹, Finn Feindt¹, Daniil Rastorguev^1,3, Simon Spannagel¹, and Stephan Lachnit^1,4 — ¹Deutsches Elektronen-Synchrotron DESY, Hamburg — ²University of Bonn, Germany — ³University of Wuppertal, Germany — ⁴University of Hamburg, Germany

Silicon Photomultipliers are arrays of Single Photon Avalanche Diodes (SPADs) and represent the most widely used technology in the field of solid state single photon detection nowadays. They are extensively employed in high-energy physics, medical and various commercial applications. Commercial CMOS processes have recently implemented SPADs in process design kits, allowing a low-cost implementation of monolithic SiPMs with customised electronics. Digital SiPMs allow for reduced readout system complexity, because digitization and processing are done on chip. Furthermore, it is possible to implement new features such as single pixel masking and full hit map readout. These features make dSiPMs an attractive technology for applications like optical fibre readout, calorimetry and 4D-tracking of charged particles.

A prototype digital SiPM was developed by DESY using LFoundry 150 nm CMOS imaging technology. In this contribution, the design and functionality of the dSiPM will be presented together with the results of the characterisations performed. Particular attention will be paid to spatial and temporal resolution in MIP detection.

Keywords: SiPM; Pixel detectors; Timing; 4D Tracking