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T: Fachverband Teilchenphysik
T 92: Detectors 8 (semiconductors)
T 92.7: Vortrag
Donnerstag, 7. März 2024, 17:30–17:45, Geb. 30.23: 2/1
A HV-CMOS sensor based beam monitoring system for therapeutic ion beams — •Bogdan Topko1, Matthias Balzer2, Alexander Dierlamm1,2, Felix Ehrler2, Ulrich Husemann1, Pietro Marchesi1, Ivan Perić2, and Hui Zhang2 — 1Institute of Experimental Particle Physics (ETP), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany — 2Institute for Data Processing and Electronics (IPE), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany
Therapeutic ion beams for cancer treatment have significant benefits over photon irradiation. The Bragg peak of ion energy deposition and accurate control of the beam position and size via the beam delivery system enable the largest amount of energy to be deposited into the tumor with the least amount of damage to healthy tissue. In this approach the beam monitoring system is needed to deliver doses to the tumor in an efficient and safe manner. The presented studies are focused on the development of a beam monitoring system based on HV-CMOS sensors. The beam position, shape and fluence should be provided by the system in real time. The system should be tolerant to the magnetic fields and vibrations for the MRI-guided ion beam therapy application. The HV-CMOS HitPix sensor family with counting electronics and frame based readout has been developed at the ASIC and Detector Lab (IPE, KIT) to fulfill these requirements. Recent results of ion beam measurements and a beam monitor demonstrator are presented.
Keywords: HV-CMOS sensors; Instrumentation for hardon therapy; Solid state detectors