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Q: Fachverband Quantenoptik und Photonik
Q 20: Atom & Ion Clocks and Metrology I
Q 20.4: Vortrag
Dienstag, 11. März 2025, 12:00–12:15, HS Botanik
Integrated Photonic AlN-Based High-Bandwidth Phase Modulator for Precision Control in Yb+ Ion Experiments — •Suat Icli1,2, Rangana Banerjee Chaudhuri1, Elena Jordan1, Fatemeh Salahshoori1, and Tanja E. Mehlstäubler1,2,3 — 1Physikalisch-Technische Bundesanstalt, Braunschweig, Germany — 2Institut für Quantenoptik, Leibniz Universität Hannover, Hannover, Germany — 3Laboratorium für Nano- und Quantenengineering, Leibniz Universität Hannover, Hannover, Germany
This work introduces an aluminum nitride (AlN)-based phase modulator designed for precision control in ytterbium ion trapping experiments, which require modulation across a range of wavelengths from UV to IR and frequencies from hundreds of MHz to GHz. Such devices are critical in atomic physics for achieving fine control over laser frequency and phase, directly impacting ion cooling and state preparation. The photonic AlN phase modulator achieves an electrical bandwidth from low frequencies up to 40 GHz, with low S21 (-2 dB) and S11 (-18 dB) ensuring efficient modulation over the bandwidth. At a wavelength of e.g. 411 nm the voltage-length product of 178 V.cm leads to a modulation index of 0.018*U where U is applied voltage. This highlights the suitability of the AlN platform for efficient integrated modulators. The platform offers scalable photonic components for atomic physics, establishing a versatile foundation for next-generation quantum research and technology development.
Keywords: electro-optics; modulators; aluminium nitride