Bonn 2025 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 62: Poster – Quantum Information Technologies (joint session Q/QI)
Q 62.31: Poster
Donnerstag, 13. März 2025, 17:00–19:00, Tent
Transport through a 1D channel with an epitaxial GaAs quantum dot in its vicinity — •Selma Delić1,2, Paola Atkinson3, Xuelin Jin1,2, Nataliya Demarina1, Detlev Grützmacher1,2, and Beata Kardynał1,2 — 1PGI, Forschungszentrum Jülich, 52428 Jülich, Germany — 22 Department of Physics, RWTH, 52074 Aachen, Germany — 3Institut des Nano Sciences de Paris, CNRS UMR 7588, Sorbonne Université, 75005 Paris, France
Gate-defined quantum dots (GDQD) in GaAs/AlGaAs heterostructures host spin qubits which are potentially scalable and which, thanks to the direct bandgap of GaAs, may be addressable optically. High fidelity transfer of quantum information from a photon to the electron spin in the gated qubit can be mediated by photon absorption in a self-assembled GaAs quantum dot (SAQD) [1] followed by adiabatic transfer of the photo-generated electron into the GDQD [2].
In this contribution, we present the results of our studies of the transport and optical properties of nanostructures defined by gates in GaAs/AlGaAs heterostructures with embedded SAQDs. SAQDs are tunnel coupled to the gated nanostructures. We study the effect of the quantum states in the SAQD on the electron transport characteristics of a 1D channel. Further, we discuss the impact of the lateral alignment of the gates relative to the SAQD on the device characteristics. Based on our findings, we present a potential design of the heterostructures for the spin-photon interface and the design of the devices.
[1] P. Atkinson et al., Jrn. Appl. Phys. 112, 054303 (2012)
[2] B. Joecker et al., Phys. Rev. B 99, 205415 (2019)
Keywords: quantum transport; quantum dots; spin-photon interface